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eBook Device and Circuit Cryogenic Operation for Low Temperature Electronics ePub

eBook Device and Circuit Cryogenic Operation for Low Temperature Electronics ePub

by Francis Balestra,G. Ghibaudo

  • ISBN: 0792373774
  • Category: Engineering
  • Subcategory: Engineering
  • Author: Francis Balestra,G. Ghibaudo
  • Language: English
  • Publisher: Springer; 2001 edition (May 31, 2001)
  • Pages: 262
  • ePub book: 1414 kb
  • Fb2 book: 1149 kb
  • Other: mobi mbr azw lit
  • Rating: 4.1
  • Votes: 869

Description

About this book Francis Balestra.

The first two chapters cover bulk silicon and SOI MOSFETs.

Автор: Francis Balestra; G. Ghibaudo Название: Device and Circuit . Low Temperature and Cryogenic Applications in Medicine and Surgery; Wen-Jai Yang, S. Mochizuki.

2010 Язык: ENG Размер: 2. 9 x 1. 0 x . 5 cm Основная тема: Engineering Рейтинг: Поставляется из: Германии.

cle{, title {Device and circuit cryogenic operation for low-temperature . 3. SOI MOSFETs F. Balestra, G. Ghibaudo. 4. Silion-Germanium heterojunction bipolar transistor .

cle{, title {Device and circuit cryogenic operation for low-temperature electronics }, author {Francis Balestra and G{'e}rard Ghibaudo}, journal {IEEE Circuits and Devices Magazine}, year {2001}, volume {18}, pages {54-54} }. Francis Balestra, Gérard Ghibaudo. Published in IEEE Circuits and Devices Magazine 2001. 5. Heterojunction transistors at low temperature F. Aniel, R. Adde. 6. Quantum effects and devices Y. Omura. 7. Circuits and applications J. Deen.

2. Device physics and electrical performance of bulk Silicon MOSFETs; G. Ghibaudo, F. Balestra. SOI MOSFETs; F. Silion-Germanium heterojunction bipolar transistor; . Heterojunction transistors at low temperature; F. Quantum effects and devices; Y. Circuits and applications; J. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described.

Includes bibliographical references. Personal Name: Balestra, Francis. Personal Name: Ghibaudo, Ge?rard. Rubrics: Cryoelectronics Electronic apparatus and appliances Thermal properties. Download PDF book format. Download DOC book format. Lasance, András Poppe.

Electronics fundamentals : circuits and devices, by: Goldberg, Joel, 1931- Published: (1988)

Electronics fundamentals : circuits and devices, by: Goldberg, Joel, 1931- Published: (1988). Electronics fundamentals : circuits and devices : lab manual, by: Capon, Robert J. Published: (1988).

F. Balestra G. Ghibaudo Device and circuit cryogenic operation for low temperature electronics Springer Science & Business Media 2013. E. A. Gutierrez-D J. Deen C. Claeys Low temperature electronics: physics devices circuits and applications Academic Press 2000. Affirma Spectre Circuit Simulator Device Model Equations Cadence Design System Inc. 2001. W. Liu MOSFET Models for SPICE Simulation including BSIM3v3 and BSIM vol. 4 2001

Low-temperature electronics has been studied for more than five decades

Low-temperature electronics has been studied for more than five decades. The book discusses a wide range of applications including circuits, digital systems, computers, and medical instrumentation.

The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials . Device and Circuit Cryogenic Operation for Low Temperature Electronics Francis Balestra,Gerard Ghibaudo,G.

The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas. Все результаты Поиска книг Google Библиографические данные.

Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.